Magnetic Field Sensors
KMY 20 S / KMZ 20 S
Function principle
Magnetoresistive materials can change their resistivity in an external magnetic field. The
variation of the resistivity is determined by the rotation of magnetisation with respect to the
direction of the current flow. Permalloy (Ni Fe ) is commercially used as
81 19
magnetoresistive material. The relative change of resistivity is 2-3 % for this material. The
high sensitive and small size magnetoresistive sensors consist of chip 174B covered with
thin film permalloy stripes. These stripes form a Wheatstone bridge, whose output voltage
is proportional to the magnetic field component H .
y
Characteristic
The bridge imbalance is a value for the magnetic field component H in the plane of the
y
chip. It is of advantage to apply an auxiliary field H = 3 kA/m which avoids flipping of the
x
magnetisation of the stripes caused by disturbing magnetic fields. A perpendicular field H
x
is necessary to stabilize sensor operation. This can be done by using a small permanent
magnet. See information for KMZ 20 M1 / KMY 20 M. Magnetic fields vertical to the chip
surface have no influence on the output voltage.
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13, D - 44 227 Dortmund, Tel.: +49 (0) 231/97400, Fax.: +49 (0) 231/974020
Internet: http://www.hlplanar.com E-Mail: service@hlplanar.deMagnetic Field Sensors
KMY 20 S / KMZ 20 S
Technical data
Absolute maximum ratings Applications
Parameter Symbol Unit Value - detection of weak magnetic fields,
e.g. earth magnetic field
Supply voltage VB V 12 - contactless mechanical switch
Total power dissipation Pto mW 120 - displacement measurement with
high resolution
Operating temperature range Tamb °C -40 ... + 125
- revolution speed detection
Storage temperature range Tstg °C -65 ... +150
on ferromagnetic gear wheels
- contactless angle measurement
Electrical characteristics (T = 25°C, H = 3 kA/m) - galvanically seperated current
amb x
measurement
Parameter Symbol Unit Value
U [mV/V]
0
Bridge resistance RB kOhm 1.4 .. 2.0
8
H x = 3 kA/m
Open circuit sensitivity SV (mV/V)/(kA/m) 4.7 ± 1.0
Output voltage range ?VO /VB mV/V 20.0 ± 4.0 6
Hysteresis of output voltage VO H/VB μV/V ≤ 50 4 H x = 1 kA/m
Offset voltage VOFF /VB mV/V ≤ ± 1.0
2
Temperature coefficients ( - 25 °C < T < 125 °C) -4 -3 -2 -1 1 2 3 4
amb H y [kA/m]
of -2
Parameter Symbol Unit Value
-4
Bridge resistance TCBR %/K 0.30 ± 0.05 -6
Open circuit sensitivity -8
(VB = const) TCSV %/K -0.30 ± 0.05
Offset voltage
(IB = const) TCT OC FS FI (μV/V% )/ /KK 0.00
≤
±
±
0 3. 05 O fou rt p du ift f ev ro el nta t g se ta v be ilr izs iu ns g f mie ald g nco em ticp fo ien le dn st HH xy
Housing of KMY 20: SOT-223-S Housing of KMZ 20: E-Line 4-Pin
SOT-223-S
1: +V0 2: -V0 V0: Output voltage
3: +VΒ 4: -VB VB: Supply voltage metric dimensions
E-Line 4-Pin
1: +V0 3: -V0 V0: Output voltage
2: -VB 4: +VB VB: Supply voltage
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13, D - 44 227 Dortmund, Tel.: +49 (0) 231/97400, Fax.: +49 (0) 231/974020
7.12.01
Internet: http://www.hlplanar.com E-Mail: service@hlplanar.de

您好！KMY Z20S是一款專為電氣行業(yè)設(shè)計(jì)的磁阻傳感器（Magnetic Resistance Sensor），它屬于一種非接觸式位移傳感器類型，利用霍爾效應(yīng)或磁敏電阻材料對(duì)磁場(chǎng)變化的敏感特性來(lái)檢測(cè)物體在磁場(chǎng)中的位置、移動(dòng)距離或者磁場(chǎng)強(qiáng)度等參數(shù)。具體來(lái)說(shuō)，Z20S可能是該型號(hào)傳感器的產(chǎn)品系列名，其中"Z"和"20"可能代表產(chǎn)品系列號(hào)或技術(shù)規(guī)格特征，而"S"則可能是"Sensor"（傳感器）的縮寫。 此款磁阻傳感器適用于廣泛的應(yīng)用場(chǎng)景，如電機(jī)控制、自動(dòng)化設(shè)備、家用電器、工業(yè)機(jī)器人以及其他需要精確測(cè)量位置或運(yùn)動(dòng)狀態(tài)的場(chǎng)合。通過(guò)集成到控制系統(tǒng)中，能夠?qū)崿F(xiàn)對(duì)被測(cè)物體位置的實(shí)時(shí)監(jiān)控和反饋，從而提高設(shè)備的精度、穩(wěn)定性和工作效率。如果您有關(guān)于KMY Z20S磁阻傳感器的具體應(yīng)用、安裝方法、技術(shù)參數(shù)或選型疑問(wèn)，請(qǐng)?jiān)敿?xì)告知，我們將為您提供更專業(yè)的幫助。